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Product Detailed Parameters
- Description：2SK1430 - 10A, 100V, 0.16OHM, N-
- Series：*
- Mfr：Sanyo
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The Sanyo 2SK1430 is a single-element N-channel silicon power MOSFET designed for high-power switching applications. It features a maximum drain current of 10A and a minimum drain-source breakdown voltage of 100V. The device exhibits a maximum on-resistance of 0.16 ohms and supports a peak pulsed drain current of 40A. It operates in depletion mode within a TO-220AB flange mount package, providing an isolated case connection. The component is rated for a maximum power dissipation of 25W.
Feature Summary
- Depletion mode operation suitable for specific logic-level control requirements
- Integrated body diode functionality inherent to the N-channel structure
- Flange mount packaging design facilitating direct heatsink attachment
Applications
- High-speed switching circuits requiring depletion mode characteristics
- Power conversion stages utilizing low-voltage high-current topologies
- Industrial motor drive interfaces needing robust thermal mounting options
Procurement Notes
Verify the specific suffix designation (e.g., -YA or -RB) during procurement, as these indicate distinct manufacturing batches or minor specification variations within the same base model family. Confirm RoHS compliance status with the supplier, as historical data indicates some variants may not meet current environmental standards. Ensure the TO-220AB package dimensions match your PCB footprint requirements before finalizing orders.
Selection Notes
Select this component when depletion mode behavior is explicitly required by the circuit design, distinguishing it from standard enhancement-mode MOSFETs. Evaluate the 0.16 ohm on-resistance against thermal management capabilities to ensure the 25W dissipation limit is not exceeded under continuous load conditions. Consider the 100V breakdown voltage margin relative to the system's maximum operating voltage spikes.
Part Context
This device belongs to the Sanyo power transistor lineup, specifically engineered for robust performance in discrete semiconductor applications. As an N-channel silicon MOSFET, it serves as a fundamental switching element in various electronic systems. The TO-220AB package provides a standardized mechanical interface for thermal management, ensuring reliable operation in demanding environments.
Replacement Considerations
Cross-reference with other Sanyo depletion mode MOSFETs sharing identical pinouts and voltage ratings. Verify that substitute components maintain the 10A current handling capability and comparable on-resistance values to preserve circuit efficiency and thermal performance without redesigning the heatsinking infrastructure.
