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Product Detailed Parameters
- Description：N-CHANNEL SILICON MOSFET
- Series：*
- Mfr：Sanyo
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The Sanyo 2SK1460LS is a single N-channel silicon MOSFET designed for power switching applications. It features a drain-to-source voltage rating of 900 V and a continuous drain current capacity of 3.5 A. The device exhibits an on-state resistance of 2.8 Ω, contributing to efficient power management. Packaged in a TO-220AB flange mount configuration with three pins, it supports a power dissipation of 40 W. This component utilizes metal-oxide semiconductor technology and operates in enhancement mode, providing high reliability through specialized manufacturing processes.
Feature Summary
- Ultrahigh-speed switching capability combined with low on-resistance for efficient power control
- High reliability achieved through the adoption of HVP (High Voltage Process) technology
- Mica-less package design that facilitates improved attachment workability during installation
Applications
- General-purpose switching devices in power supply circuits
- High-voltage AC/DC conversion systems
- Industrial motor drive controls requiring robust isolation
Procurement Notes
Verify the specific suffix LS against official Sanyo documentation to confirm package type and reliability grade. Ensure thermal management solutions align with the 40 W dissipation rating at the intended ambient temperature. Cross-reference pinout configurations with the TO-220AB standard to prevent mounting errors during integration into existing hardware designs.
Selection Notes
Select this component when high voltage blocking capability near 900 V is required alongside moderate current handling. The 2.8 Ω on-resistance makes it suitable for applications where conduction losses must be minimized without excessive heat generation. Consider the TO-220AB package for straightforward heatsinking requirements in space-constrained industrial enclosures.
Part Context
This part belongs to Sanyo's lineup of N-channel silicon MOSFETs engineered for general-purpose switching. The series emphasizes durability and speed, utilizing advanced process technologies to enhance performance. Components in this family are typically deployed in environments demanding stable operation under high electrical stress conditions.
Replacement Considerations
Direct substitutes require matching 900 V Vds, 3.5 A Id, and similar Rds(on). Verify pin compatibility and thermal characteristics before swapping. Generic replacements may lack the specific HVP reliability or mica-less package benefits documented for this model.
