2SK1526-E

$23.85

Description：N-CHANNEL POWER MOSFET
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:314ce22e35d0 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：N-CHANNEL POWER MOSFET
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：450 V
Current - Continuous Drain (Id) @ 25°C：40A
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：150mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：5800 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3PL
Package / Case：TO-3P-3, SC-65-3

Download product information

2SK1526-E

Overview

The 2SK1526-E is a silicon N-channel power MOSFET manufactured by Renesas Electronics Corporation. It is designed for through-hole mounting in a TO-3PL package. The device features an N-channel configuration with a voltage rating of 450 V and a continuous drain current capacity of 40 A. Key electrical characteristics include low on-resistance, high-speed switching capabilities, and low drive current requirements. The component is engineered to prevent secondary breakdown, ensuring reliable operation in power switching applications.

Feature Summary

Low on-resistance for efficient power conduction
High-speed switching performance
Low drive current requirement
No secondary breakdown

Applications

Power switching circuits
Automotive power management systems
Industrial motor control applications

Procurement Notes

Verify the specific suffix 'E' against official Renesas documentation to confirm it denotes the correct tape-and-reel or specific packaging variant, as suffixes can indicate handling or environmental compliance differences. Ensure the source document explicitly lists the 2SK1526-E part number rather than the generic 2SK1526 to avoid ambiguity regarding manufacturing revisions or specific lot traceability requirements.

Selection Notes

Select this component when a through-hole N-channel MOSFET with 450 V blocking capability and 40 A current handling is required. The TO-3PL package offers robust thermal performance for high-power dissipation scenarios. Consider the low drive current feature if the gate driver has limited output capability. Verify that the application does not require surface-mount technology, as this device is specified for through-hole mounting.

Part Context

The 2SK1526-E belongs to Renesas' portfolio of silicon N-channel power MOSFETs, often grouped with related devices like the 2SK1527-E. These components are utilized in automotive and industrial sectors where reliable power switching under high voltage and current conditions is critical. The TO-3PL package provides a balance between thermal efficiency and mechanical mounting flexibility compared to standard leaded packages.

Replacement Considerations

The 2SK1527-E is documented alongside the 2SK1526-E in Renesas datasheets, suggesting potential pin-compatible or functionally similar alternatives within the same product family. Verify exact electrical parameters such as Rds(on) and Vgs(th) before substitution to ensure compatibility with the existing circuit design.