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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1566-E is a silicon N-channel MOSFET manufactured by Renesas Electronics Corporation. It features an 800 mΩ maximum on-resistance at 10V and a typical value of 600 mΩ. The device has a typical input capacitance (Ciss) of 1050 pF. It is housed in a TO-220FM package with three leads. The component is lead-free, RoHS compliant, and qualified for industrial applications.
Feature Summary
- Low on-resistance for efficient power conduction
- High-speed switching capability
- Low drive current requirements
- No secondary breakdown
Applications
- Switching regulators
- DC-DC converters
- Industrial equipment
- Consumer electronics
Procurement Notes
Verify the specific ordering suffix to ensure the correct package variant, as the -E designation typically indicates RoHS compliance but may not define the physical housing type alone. Confirm the manufacturer's datasheet for the exact pinout and thermal characteristics associated with the TO-220FM configuration. Ensure the procurement channel provides genuine components from Renesas Electronics Corporation to avoid counterfeit risks.
Selection Notes
Select this component for applications requiring moderate voltage handling with low conduction losses. The TO-220FM package offers robust mechanical stability and thermal dissipation capabilities suitable for through-hole mounting. Consider the 600 mΩ typical resistance when designing for efficiency. Verify that the gate drive circuitry can support the required switching speeds without excessive power loss.
Part Context
This part belongs to Renesas' single FET lineup, specifically designed for general-purpose power switching. It complements other automotive and industrial grade MOSFETs offered by the manufacturer. The device is distinct from the 2SA1566, which is a PNP transistor, ensuring correct polarity selection for circuit design.
Replacement Considerations
Direct substitutes should match the N-channel configuration, similar RDS(ON) values, and TO-220FM packaging. Verify pin compatibility and thermal performance before substitution. Cross-reference with Renesas' official replacement guides for guaranteed electrical equivalence.
