2SK1567-04-E

$3.76

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:76228454eceb Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK1567-04-E

Overview

The Renesas 2SK1567-04-E is an N-channel power MOSFET designed for switching regulator and DC-DC converter applications. It features a TO-220FM package with through-hole mounting. Key electrical parameters include a maximum on-resistance of 900 mΩ at 10V gate drive and a typical input capacitance of 1050 pF. The device supports industrial qualification levels and operates without secondary breakdown, ensuring reliable performance in high-speed switching environments.

Feature Summary

Low on-resistance for efficient power handling
High-speed switching capability
Low drive current requirements
No secondary breakdown

Applications

Switching regulators
DC-DC converters
Industrial equipment
Consumer use electronics

Procurement Notes

Verify the specific suffix -04-E against official Renesas documentation to confirm package type and lead-free status. Ensure the TO-220FM form factor matches your PCB thermal and mechanical design constraints. Cross-reference the industrial qualification level with your system's environmental operating requirements before finalizing procurement.

Selection Notes

Select this component when low on-resistance and high-speed switching are critical for efficiency. The TO-220FM package suits applications requiring robust thermal management via heatsinking. Consider the 900 mΩ RDS(on) limit for voltage drop calculations. Verify that the 1050 pF input capacitance aligns with your gate driver capabilities for optimal switching performance.

Part Context

This part belongs to Renesas' silicon N-channel MOSFET portfolio, specifically optimized for power switching applications. It complements other discrete power devices by offering a balance of low conduction losses and fast transient response. The industrial qualification ensures suitability for demanding operational environments beyond standard consumer grade limits.

Replacement Considerations

Check for direct pin-compatible alternatives within the same Renesas series or comparable packages. Ensure substitute parts meet or exceed the 900 mΩ on-resistance and 1050 pF capacitance specifications. Verify that any replacement maintains the TO-220FM footprint and industrial temperature range ratings.