2SK1567-E

$3.76

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:b3c30bbb7b3d Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK1567-E

Overview

The Renesas Electronics Corporation 2SK1567-E is an N-channel power MOSFET designed for high-efficiency switching applications. It features a low on-resistance of 900 mΩ at 10V gate drive, enabling effective current handling with minimal conduction losses. The device utilizes a TO-220FM through-hole package, suitable for industrial and consumer use cases requiring robust thermal performance. Key electrical characteristics include a typical input capacitance (Ciss) of 1050 pF, supporting fast switching speeds while maintaining low drive current requirements.

Feature Summary

Low on-resistance for efficient power conversion
High-speed switching capability with low drive current
No secondary breakdown for enhanced reliability

Applications

Switching regulators
DC-DC converters
Industrial equipment power stages
Consumer electronics power supplies

Procurement Notes

Verify the specific suffix (e.g., -E) against official Renesas documentation to confirm lead-free status and exact mechanical dimensions. Ensure the TO-220FM package type matches your PCB footprint requirements. Confirm that the 900 mΩ RDS(on) specification aligns with your thermal management design constraints for the intended load current.

Selection Notes

Select this component when a through-hole N-channel MOSFET is required for medium-power switching applications. The TO-220FM package offers superior heat dissipation compared to surface-mount alternatives. Consider the 1050 pF input capacitance when designing gate drive circuits to ensure adequate switching speed without excessive drive power consumption.

Part Context

This part belongs to Renesas' discrete power semiconductor portfolio, specifically within the single FET category. It serves as a fundamental building block for power supply designs where reliability and efficiency are critical. The device complements other power management solutions by providing robust switching elements for voltage regulation tasks.

Replacement Considerations

Check for direct substitutes with identical pinouts and similar RDS(on) values in the TO-220FM package. Verify that any replacement maintains the same N-channel configuration and meets the required voltage and current ratings for the specific circuit application.