ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：SMALL SIGNAL N-CHANNEL MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1591-T2B-A is a small signal N-channel vertical type MOSFET manufactured by Renesas Electronics Corporation. Designed for switching applications, this silicon metal-oxide semiconductor field-effect transistor supports a drain current of 0.2A and features a single channel configuration. The device is engineered to be driven directly by standard logic outputs, facilitating integration into compact electronic circuits. It is supplied in an embossed tape carrier format compliant with RoHS environmental standards.
Feature Summary
- Vertical N-channel MOSFET structure optimized for switching operations
- Direct drive capability from standard logic output signals
- RoHS compliant construction ensuring environmental safety standards
Applications
- General purpose low-current switching circuits
- Logic-level controlled load switching applications
- Small signal amplification stages requiring direct logic interfacing
Procurement Notes
Verify the specific suffix T2B-A against official Renesas documentation to confirm package type and reel specifications. Ensure compatibility with existing PCB footprints and thermal management requirements. Confirm that the embossed tape carrier format aligns with automated assembly equipment capabilities. Cross-reference the component marking with the datasheet to prevent counterfeit substitution during sourcing.
Selection Notes
Select this component for applications requiring low-power N-channel switching with direct logic interface compatibility. Consider the 0.2A continuous drain current limit when designing load paths. Evaluate the input capacitance characteristics for high-speed switching requirements. Verify that the vertical structure meets the thermal dissipation needs of the target enclosure without additional heatsinking.
Part Context
This part belongs to Renesas' discrete power transistor portfolio, specifically targeting small-signal switching needs. It complements larger power MOSFETs by providing a solution for low-current control tasks where direct logic driving is essential. The product line emphasizes reliability and environmental compliance for consumer and industrial electronics.
Replacement Considerations
Consult official Renesas cross-reference guides for verified substitutes. Generic replacements may differ in gate threshold voltage or on-resistance, affecting logic compatibility. Verify pinout alignment and package dimensions before substituting to ensure mechanical fit.
