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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1628-E is a silicon N-channel MOSFET manufactured by Renesas Electronics Corporation. It is designed for high-speed switching applications, featuring low on-resistance and low drive current requirements. The device is suitable for use in switching regulators and DC-DC converters. Key electrical characteristics include a typical input capacitance (Ciss) of 2800 pF. The component is lead-free and RoHS3 compliant.
Feature Summary
- Low on-resistance for efficient power handling
- High-speed switching capability
- Low drive current requirement
- No secondary breakdown
Applications
- Switching regulators
- DC-DC converters
- Industrial equipment
- Consumer electronics
Procurement Notes
Verify the specific package type and pin configuration against the official Renesas datasheet before integration. Confirm RoHS3 compliance status if required by your manufacturing standards. Ensure the ordering suffix matches the exact variant needed for your design. Cross-reference the manufacturer part number with distributor listings to ensure authenticity. Check for any updates to the datasheet that may affect mechanical or electrical specifications.
Selection Notes
Select this component for applications requiring fast switching speeds and low conduction losses. Consider the thermal management requirements based on the power dissipation capabilities. Evaluate the gate drive circuitry to accommodate the low drive current specification. Compare input capacitance values with other options to ensure compatibility with the control logic. Verify the operating temperature range meets the environmental conditions of the target application.
Part Context
This N-channel MOSFET belongs to Renesas' discrete semiconductor portfolio, historically linked to Hitachi Semiconductor technology following corporate mergers. It serves as a fundamental power switching element in modern electronic circuits. The device represents a standard solution for general-purpose power conversion tasks in both industrial and consumer sectors.
Replacement Considerations
Consult the official Renesas replacement guide for verified substitutes. Direct replacements must match the N-channel MOSFET topology and similar electrical ratings. Verify pinout compatibility to avoid board redesign. Check for equivalent switching speed and on-resistance performance.
