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Product Detailed Parameters
- Description：MOSFET N-CH 900V 8A TO3P
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 4A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1730 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：60W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P
- Package / Case：TO-3P-3, SC-65-3
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Overview
The 2SK1775-E is an N-channel enhancement mode silicon power MOSFET manufactured by Renesas Electronics Corporation. It is designed for high-voltage switching applications, featuring a drain-source voltage rating of 900 V and a continuous drain current capacity of 8 A. The device utilizes a TO-3P surface-mount package to facilitate thermal management in through-hole mounting configurations. Key electrical characteristics include a gate-source voltage limit of ±30 V and a maximum on-resistance of 1600 mΩ. These specifications define its operational envelope for industrial power conversion systems.
Feature Summary
- N-channel enhancement mode construction for reliable switching control
- High breakdown voltage capability suitable for demanding power environments
- Robust thermal design integrated within the TO-3P surface-mount package
Applications
- Industrial motor drive circuits
- High-voltage DC-DC converter topologies
- Inverter bridge stages in power supplies
Procurement Notes
Verify component authenticity through authorized Renesas distributors or certified supply chain partners. Confirm the specific suffix designation matches project requirements. Review the official datasheet for absolute maximum ratings and thermal derating curves prior to integration. Ensure handling procedures comply with electrostatic discharge protection standards during assembly.
Selection Notes
Select this component when a high-voltage N-channel MOSFET with moderate current handling is required. The TO-3P package offers a balance between thermal performance and PCB space efficiency. Evaluate the on-resistance against conduction loss requirements and ensure the gate drive voltage remains within the specified ±30 V limit for safe operation.
Part Context
This part belongs to the Renesas discrete power MOSFET portfolio, which provides solutions for various industrial and consumer electronics applications. The 2SK series typically targets high-voltage switching needs where reliability and thermal stability are critical. Renesas designs these components to meet stringent automotive and industrial quality standards.
Replacement Considerations
Consult official Renesas documentation for verified equivalent part numbers. Cross-reference parameters such as voltage rating, current capacity, and package dimensions before substitution. Generic equivalents may not match the original thermal or electrical performance characteristics.
