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Product Detailed Parameters
- Description：MOSFET N-CH 20V 50MA SC59
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：50mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V
- Rds On (Max) @ Id, Vgs：40Ohm @ 10mA, 2.5V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：10V
- Input Capacitance (Ciss) (Max) @ Vds：5.5 pF @ 3 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-59
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Toshiba Semiconductor and Storage 2SK1828TE85LF is an N-channel MOSFET designed for surface mount applications. It features a drain-source voltage rating of 20 V and a continuous drain current capacity of 50 mA at ambient temperature. The device supports a maximum power dissipation of 200 mW. It is housed in an SC-59 package, also identified as SOT-23-3, facilitating compact circuit board layouts.
Feature Summary
- N-channel enhancement mode field-effect transistor architecture
- Surface mount construction for automated assembly processes
- Low voltage operation capability suitable for portable electronics
Applications
- Battery-powered portable devices
- Signal switching circuits
- Low-power load management systems
Procurement Notes
Verify the specific TE85L tape-and-reel configuration during sourcing to ensure compatibility with existing pick-and-place equipment. Confirm RoHS compliance status matches project requirements. Cross-reference the manufacturer part number with distributor databases to validate authenticity and traceability before finalizing procurement orders.
Selection Notes
Select this component when a low-voltage N-channel switch is required in space-constrained designs. Ensure the application current remains within the 50 mA limit to maintain thermal stability. Verify that the 20 V breakdown voltage exceeds the maximum operating voltage of the target circuit to prevent device failure under transient conditions.
Part Context
This component belongs to Toshiba's discrete semiconductor lineup, specifically engineered for general-purpose switching tasks. The SC-59 package provides a standardized footprint compatible with various surface-mount assembly lines. It serves as a compact alternative to larger through-hole transistors in modern consumer electronics manufacturing.
Replacement Considerations
Consult official Toshiba documentation for verified substitute part numbers. Do not assume functional equivalence with other N-channel MOSFETs without validating pinout, voltage ratings, and thermal characteristics against the original specifications.
