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Product Detailed Parameters
- Description：MOSFET N-CH 1500V 4A TO3P
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1500 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：7Ohm @ 2A, 15V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P
- Package / Case：TO-3P-3, SC-65-3
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Overview
The 2SK1835-E is a high-reliability N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a 1500 V drain-source breakdown voltage and a continuous drain current of 4 A at the case temperature. The device utilizes a TO-3P (TO-3PN) three-pin through-hole package, designed for demanding industrial applications. Key electrical characteristics include low on-resistance and high-speed switching capabilities, making it suitable for use in switching regulators and other high-voltage power conversion circuits.
Feature Summary
- High breakdown voltage capability for robust high-voltage operation
- High-speed switching performance with low drive current requirements
- Elimination of secondary breakdown effects for enhanced reliability
- Low on-resistance to minimize conduction losses
Applications
- Switching regulator circuits
- High-voltage power conversion systems
- Industrial power supply designs
Procurement Notes
Verify component authenticity and datasheet alignment before procurement. Note that this specific part number is scheduled for obsolescence and will be discontinued by the manufacturer. Confirm availability status and potential end-of-life constraints with authorized distributors or suppliers prior to finalizing acquisition plans.
Selection Notes
Select this component for applications requiring high-voltage isolation and reliable switching performance in through-hole configurations. Consider the TO-3P package constraints for thermal management and board layout. Evaluate alternative components if long-term supply continuity is a critical project requirement due to the announced discontinuation status.
Part Context
This N-channel MOSFET belongs to Renesas Electronics' portfolio of high-voltage power semiconductors. It is engineered for durability in harsh environments, offering a balance of high voltage handling and efficient switching. The TO-3P package provides mechanical stability and effective heat dissipation for medium-power applications.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the scheduled obsolescence, engineers should consult official Renesas resources or authorized distributors for validated replacement recommendations.
