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Product Detailed Parameters
- Description：2SK1958-T1-A - N-CHANNEL MOS FET
- Series：-
- Mfr：Renesas
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：16 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
- Rds On (Max) @ Id, Vgs：12Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±7V
- Input Capacitance (Ciss) (Max) @ Vds：10 pF @ 3 V
- FET Feature：-
- Power Dissipation (Max)：150mW (Ta)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-MMPAK
- Package / Case：8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
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Overview
The Renesas 2SK1958-T1-A is an N-channel MOSFET transistor designed for high-speed switching applications. It features a Drain-to-Source Voltage (Vdss) of 16 V and a continuous drain current of 100 mA at ambient temperature. The device dissipates 150 mW of power under standard conditions. It utilizes an 8-MMPAK surface mount package, suitable for compact designs. Drive voltages for maximum on-resistance are specified at 1.5 V and 4 V.
Feature Summary
- N-channel MOSFET configuration optimized for high-speed switching
- Compact 8-MMPAK surface mount package design
- Low voltage operation capability with 16 V rating
Applications
- High-speed switching circuits
- Small space power management systems
Procurement Notes
Verify the specific datasheet version for the 2SK1958-T1-A to confirm exact electrical characteristics and thermal limits. Ensure compatibility with the 8-MMPAK footprint during PCB layout. Cross-reference drive voltage requirements against system logic levels to guarantee proper switching performance.
Selection Notes
Select this component for applications requiring low-voltage, low-current switching in minimal board space. The 16 V rating suits low-side switching tasks. Verify that the 100 mA current limit meets load requirements. Consider the 150 mW power dissipation constraint for thermal management in enclosed environments.
Part Context
This part belongs to Renesas' discrete single FET and MOSFET product line. It complements their broader portfolio of power management solutions. While Renesas offers automotive-grade MOSFETs for larger currents, this specific model targets general-purpose, low-power switching needs within compact form factors.
Replacement Considerations
Consult official substitution guides for compatible N-channel MOSFETs with similar 16 V ratings and 8-MMPAK packaging. Verify pinout compatibility before replacing to ensure circuit integrity.
