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Product Detailed Parameters
- Description：MOSFET N-CH 20V 100MA SC70
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V
- Rds On (Max) @ Id, Vgs：12Ohm @ 10mA, 2.5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：10V
- Input Capacitance (Ciss) (Max) @ Vds：8.5 pF @ 3 V
- FET Feature：-
- Power Dissipation (Max)：100mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-70
- Package / Case：SC-70, SOT-323
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Overview
The 2SK2034TE85LF is an N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It features a maximum drain-source voltage of 20V and a continuous drain current of 100mA. The device exhibits a maximum on-resistance of 12 Ohms at a gate-source voltage of 2.5V and a drain current of 10mA. It is designed for surface mount installation in SC-70 packages with a power dissipation rating of 100mW and supports junction temperatures up to 150°C.
Feature Summary
- N-channel metal oxide semiconductor field effect transistor structure
- Low on-resistance characteristic optimized for 2.5V gate drive applications
- High thermal stability supporting elevated junction temperature operation
Applications
- Battery-powered portable electronic devices
- Low-voltage DC-DC converter circuits
- General-purpose low-side switching applications
Procurement Notes
Verify the exact package marking and datasheet revision when sourcing. Confirm that the TE85L suffix corresponds to the specific reel or cut tape configuration required for your assembly line equipment. Ensure compatibility with standard SC-70 footprint designs during PCB layout validation.
Selection Notes
Select this component for circuits requiring compact N-channel switching with moderate current handling capabilities. Evaluate the 12 Ohm on-resistance against total power loss constraints. Consider the 20V breakdown voltage margin relative to the system supply rail to ensure reliable operation under transient conditions.
Part Context
This part belongs to Toshiba's discrete semiconductor portfolio, specifically within the single FET category. It utilizes the USM (Ultra Small Module) form factor, which aligns with industry trends toward miniaturization in consumer electronics. The device serves as a fundamental building block for power management and signal routing in space-constrained designs.
Replacement Considerations
Consult official Toshiba documentation for qualified substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before integrating any alternative components into existing designs.
