2SK209-GR(TE85L,F)

Overview

The Toshiba 2SK209-GR(TE85L,F) is a silicon N-channel junction field-effect transistor (JFET) designed for audio frequency low noise amplifier applications. It features a small SOT-346 package and provides high forward transfer admittance of 15 mS typical at VDS = 10 V, VGS = 0. The device offers a gate-drain breakdown voltage of -50 V and a maximum drain power dissipation of 150 mW. The GR suffix indicates a specific drain current classification range of 2.6 to 6.5 mA.

Feature Summary

• Engineered for audio frequency low noise amplifier applications with minimal signal degradation
• Provides high input impedance characterized by extremely low gate cut-off current
• Features high forward transfer admittance for effective signal amplification
• Utilizes a compact surface-mount package suitable for space-constrained designs

Applications

• Audio frequency low noise amplifier circuits
• Microphone preamplifier stages
• High-fidelity audio signal processing equipment

Procurement Notes

Verify the exact ordering suffix TE85L,F against official Toshiba Semiconductor documentation to confirm the specific binning and packaging configuration. Ensure that the GR drain current classification aligns with the circuit requirements before finalizing procurement. Cross-reference the datasheet revision date to guarantee access to the most current electrical characteristics and reliability guidelines.

Selection Notes

Select this component when designing audio preamplifiers requiring low noise figures and high input impedance. The GR variant specifically suits applications needing a drain current between 2.6 and 6.5 mA. Consider the -50 V gate-drain breakdown voltage for appropriate biasing margins. Evaluate the thermal constraints relative to the 150 mW power dissipation rating during operation.

Part Context

This JFET belongs to Toshiba's discrete semiconductor lineup focused on analog signal processing. It serves as a specialized active component within the broader category of junction field-effect transistors. The device complements other audio-grade semiconductors by providing stable amplification characteristics in compact form factors for consumer and professional audio electronics.

Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Generic replacements may not match the specific GR drain current binning or noise figure specifications required for precision audio applications.