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Product Detailed Parameters
- Description：MOSFET N-CH 30V 2A MPT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：400mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：230 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：MPT3
- Package / Case：TO-243AA
Download product information
Overview
The ROHM Semiconductor 2SK2103T100 is a silicon N-channel MOSFET designed for small switching applications. It features low on-resistance, fast switching speed, and a wide safe operating area (SOA). The device supports low-voltage drive at 4V, facilitating easy design of drive circuits and parallel usage. Absolute maximum ratings are defined at Ta = 25°C. Electrical characteristics and curves are provided for standard operation conditions.
Feature Summary
- Low on-resistance for efficient power handling.
- Fast switching speed suitable for high-frequency applications.
- Wide safe operating area (SOA) for robust performance.
- Low-voltage drive capability at 4V simplifies circuit design.
Applications
- Small switching circuits
- Audio visual equipment
- Office-automation equipment
- Communications devices
Procurement Notes
Verify the specific ordering suffix T100 against the manufacturer's current datasheet to confirm packaging and reel specifications. Ensure the component meets the intended application's reliability requirements, as it is designed for ordinary electronic equipment rather than safety-critical systems like medical or aerospace instruments without prior consultation.
Selection Notes
Select this MOSFET for applications requiring low-voltage drive compatibility and efficient switching. Consider its wide SOA and ease of parallel operation when designing power stages. Verify that the absolute maximum ratings align with the system's operational limits at the expected ambient temperature of 25°C.
Part Context
This component belongs to ROHM's small switching transistor series. It utilizes a silicon N-channel structure optimized for general-purpose electronic devices. The product is subject to export control regulations in Japan under Annex 1 (Item 16) of the Export Trade Control Order.
Replacement Considerations
No direct replacement part numbers are documented in the provided source material. Consult ROHM sales representatives for alternative components if this part is discontinued or unavailable.
FAQ
What is the recommended drive voltage for the 2SK2103?
The device is designed for low-voltage drive at 4V, which simplifies the design of drive circuits.
Is the 2SK2103 suitable for automotive or medical applications?
The product is designed for ordinary electronic equipment. For equipment requiring extremely high reliability such as medical instruments, consult ROHM sales representatives in advance.
