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Product Detailed Parameters
- Description：SMALL SIGNAL N-CHANNEL MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK2111-T1-AY is a small signal N-channel MOSFET manufactured by Renesas Electronics Corporation. It features a POMM package with dimensions of 2 x 4 x 1.6 mm and contains three leads. The device has a typical input capacitance (Ciss) of 170 pF and supports a continuous drain current (ID) of 1 A. Maximum on-resistance (RDS(ON)) is specified at 450 mΩ when measured at a gate voltage of 10 V. The component is designed for industrial qualification levels and utilizes embossed tape carrier packaging.
Feature Summary
- N-channel MOSFET configuration for single FET applications
- Compact POMM package suitable for space-constrained designs
- Industrial qualification level for robust performance
Applications
- Small signal switching circuits
- Industrial control systems
- Automotive power management modules
Procurement Notes
Verify the specific ordering suffix to ensure correct packaging and qualification. Confirm that the POMM package type matches your board layout requirements. Check for lead-free compliance status as indicated in official documentation. Ensure the industrial qualification level meets your project's environmental standards before finalizing procurement orders.
Selection Notes
Select this component for applications requiring a compact N-channel MOSFET with moderate current handling capabilities. The low on-resistance at 10 V gate drive makes it suitable for efficient switching operations. Consider the physical dimensions of the POMM package during PCB design to ensure proper footprint compatibility and thermal management strategies are implemented correctly.
Part Context
This part belongs to Renesas' portfolio of power MOSFETs designed for automotive and industrial sectors. It serves as a discrete solution for power switching tasks where size and efficiency are critical. The product line emphasizes reliability and compliance with industry standards for electronic components used in demanding operational environments.
Replacement Considerations
Consult official Renesas documentation for verified substitute part numbers. Cross-reference electrical parameters such as RDS(ON) and ID to ensure functional equivalence. Verify package compatibility before implementing any alternative components in existing designs.
