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Product Detailed Parameters
- Description：NCH J-FET
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The 2SK212D-SPA is an RF small signal field-effect transistor designed for very high frequency band applications. It is a single-element, N-channel junction FET constructed from silicon. The device utilizes the SPA (Small Package Amplifier) surface-mount technology and features a three-pin inline configuration. Key electrical characteristics include a maximum drain current of 0.02 A, a maximum feedback capacitance of 0.15 pF, and a maximum power dissipation of 0.2 W. It operates in depletion mode with a maximum operating temperature of 125 °C.
Feature Summary
- Designed for RF small signal amplification in very high frequency bands
- Utilizes N-channel junction FET technology for low noise performance
- Employes SPA surface-mount packaging for automated placement
Applications
- RF amplifier circuits
- Very high frequency signal processing
- Low noise front-end stages
Procurement Notes
Verify the manufacturer designation as SANYO Semiconductor or ON Semiconductor, as historical records indicate SANYO was the original producer before its semiconductor division acquisition. Confirm the specific suffix 'D' corresponds to the intended tape-and-reel quantity or binning if critical for assembly. Ensure the component matches the R-PSIP-T3 package outline dimensions provided in official datasheets.
Selection Notes
Select this component when a depletion-mode JFET is required for RF applications rather than enhancement-mode MOSFETs. Consider the 0.15 pF feedback capacitance limit for high-frequency stability. The 0.02 A current rating restricts usage to small-signal environments. Verify that the SPA package footprint aligns with the PCB design constraints compared to through-hole alternatives.
Part Context
This component belongs to the family of RF small signal transistors historically manufactured by SANYO Semiconductor. Following the acquisition of SANYO's semiconductor business, these parts are often associated with ON Semiconductor. The 'SPA' designation indicates a specialized surface-mount package optimized for high-frequency performance and automated manufacturing processes.
Replacement Considerations
Direct cross-compatibility should be verified against other N-channel JFETs in the SPA package with similar Crss and ID ratings. Generic replacements may require circuit redesign due to differences in gate-source voltage thresholds and gain bandwidth products. Consult official substitution guides from ON Semiconductor for validated equivalents.
