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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK2133-AZ is an N-channel silicon power MOSFET manufactured by NEC. It features a drain-source breakdown voltage of 250 V and a continuous drain current of 16 A. The maximum on-resistance is 0.26 Ω. The device is housed in a TO-220AB flange mount package with three pins. It operates in enhancement mode and includes a built-in diode. The avalanche energy rating is 320 mJ, and the maximum operating temperature is 150 °C.
Feature Summary
- N-channel silicon metal-oxide semiconductor construction
- Integrated avalanche energy capability rated at 320 mJ
- Single configuration with built-in diode
- Flange mount package design for direct heat dissipation
Applications
- Power switching circuits requiring high voltage isolation
- Industrial motor control systems
- High-power DC-DC conversion stages
Procurement Notes
Verify the manufacturer designation as NEC when sourcing this component, as it reflects the original production origin before corporate restructuring. Confirm the specific suffix AZ matches the required pinout and thermal characteristics for your PCB layout. Ensure the TO-220AB flange mount specification aligns with your heatsinking requirements. Check for RoHS compliance status if environmental regulations apply to your assembly process.
Selection Notes
Select this component for applications demanding a 250 V blocking voltage and moderate current handling up to 16 A. The low on-resistance supports efficient power management in switching regulators. Consider the flange mount package for superior thermal performance compared to standard insulated packages. Evaluate the avalanche rating if the circuit experiences significant inductive load switching transients.
Part Context
This part belongs to the family of discrete power semiconductors designed for robust industrial and consumer electronics applications. It serves as a fundamental switching element in power conversion topologies. The TO-220AB form factor provides a balance between electrical performance and mechanical mounting flexibility for through-hole assembly processes.
Replacement Considerations
The 2SK2133-Z is a variant from Renesas with identical electrical specifications but may differ in packaging details or manufacturing origin. Verify pin compatibility and thermal resistance values before substitution.
