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Product Detailed Parameters
- Description：SMALL SIGNAL N-CHANNEL MOSFET
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
- Rds On (Max) @ Id, Vgs：15Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.1V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±7V
- Input Capacitance (Ciss) (Max) @ Vds：6 pF @ 3 V
- FET Feature：-
- Power Dissipation (Max)：200mW
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-59
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The 2SK2158A-T1B-AT is a small signal N-channel MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source breakdown voltage of 50V and a continuous drain current of 100mA at ambient temperature. The device is designed for power switching and load control applications, offering low on-resistance characteristics suitable for efficient operation in compact circuits.
Feature Summary
- N-channel vertical type MOSFET structure
- Designed for general-purpose switching applications
- Capable of direct drive from low voltage logic levels
Applications
- Industrial equipment switching
- Consumer electronics load control
- General-purpose power switching circuits
Procurement Notes
Verify the complete part number including the -AT suffix to ensure correct tape and reel packaging configuration. Confirm RoHS compliance status as indicated in official documentation. Check marking codes such as G23 for authenticity. Ensure compatibility with SOT-346 or SC-59 footprint requirements during PCB layout.
Selection Notes
Select this component for applications requiring an N-channel switch with 50V rating and 100mA current capacity. Consider thermal management for surface mount packages. Evaluate gate drive voltage requirements against the datasheet specifications to ensure reliable switching performance in the target circuit environment.
Part Context
This device belongs to Renesas' small signal MOSFET portfolio, often used in conjunction with other discrete semiconductors for power management solutions. It serves as a fundamental building block for low-power switching tasks in both industrial and consumer product designs where space efficiency is critical.
Replacement Considerations
Consult official substitution guides for equivalent N-channel MOSFETs with matching 50V and 100mA ratings. Verify pinout compatibility with SC-59/SOT-346 packages before implementation.
