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Product Detailed Parameters
- Description：MOSFET N-CH 200V 8A TO3P
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tray
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：100W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P
- Package / Case：TO-3P-3, SC-65-3
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Overview
The 2SK2221-E is an N-channel enhancement-mode silicon MOSFET manufactured by Renesas Electronics Corporation. It is designed for low-frequency power amplifier applications, offering high power gain and excellent frequency response. The device features a wide area of safe operation and good complementary characteristics with the 2SJ351 and 2SJ352 P-channel counterparts. Internal gate protection diodes are integrated to enhance reliability during switching operations.
Feature Summary
- Enhancement-mode N-channel construction
- Integrated gate protection diode
- Wide area of safe operation
- High forward transfer admittance
Applications
- Low frequency power amplifiers
Procurement Notes
Verify the specific suffix 'E' against the official Renesas datasheet to confirm package type and compliance status. Ensure the component matches the required complementary pairing with 2SJ351 or 2SJ352 devices for intended circuit functionality. Confirm RoHS status as historical documentation may vary.
Selection Notes
Select this component for linear amplifier designs requiring high power gain at low frequencies. Consider the complementary 2SJ351/2SJ352 pair for push-pull configurations. Verify thermal management requirements due to the power handling capabilities inherent in its design class.
Part Context
This part belongs to the legacy NEC Electronics product line acquired by Renesas Technology Corporation in 2010. Documentation retains references to the original manufacturer name. It serves as a discrete power transistor within the broader portfolio of analog and power semiconductor solutions.
Replacement Considerations
Consult official substitution lists for direct equivalents. Generic MOSFET replacements must match voltage ratings and gain characteristics precisely to maintain amplifier performance stability.
