2SK2231(TE16R1,NQ)

2SK2231(TE16R1,NQ)

$0.77
  • Description:MOSFET N-CH 60V 5A PW-MOLD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:94698bbdd19c Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 5A PW-MOLD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:160mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:370 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):20W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PW-MOLD
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

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2SK2231(TE16R1,NQ)

Overview

The Toshiba Semiconductor and Storage 2SK2231(TE16R1,NQ) is an N-channel MOSFET designed for high-speed, high-voltage switching applications. It utilizes the π-MOS structure to achieve low ON-resistance and fast switching characteristics. The device is suitable for chopper regulators, DC-DC converters, and motor drive circuits. It features a rugged construction with no carrier storage effect, ensuring superior frequency response and easy parallel connection.

Feature Summary

  • Utilizes π-MOS double-diffusion structure for high withstand voltage and current capability
  • Features low ON-resistance and fast switching speed for efficient power conversion
  • Provides enhanced circuit design flexibility through improved functioning of built-in diodes

Applications

  • Chopper regulators
  • DC-DC converters
  • Motor drive applications

Procurement Notes

Verify the specific TE16R1 tape-and-reel packaging suffix against the manufacturer's ordering guide to ensure compatibility with automated assembly equipment. Confirm RoHS compliance status as indicated in the official datasheet documentation before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high-voltage switching with minimal conduction loss. The π-MOS technology offers a balance of ruggedness and speed. Ensure gate drive voltages align with the enhancement mode requirements specified in the electrical characteristics table.

Part Context

This part belongs to the standard 2SK series of N-channel MOSFETs from Toshiba. It represents a conventional series utilizing the L2-π-MOSVI or similar generation technology, distinct from the newer U-MOS or DTMOS super-junction lines. It serves as a reliable solution for general-purpose high-voltage switching tasks.

Replacement Considerations

Consult the Toshiba selection guide for equivalent parts within the 2SK series that match the required drain-source voltage and current ratings. Verify pinout compatibility and thermal performance when substituting with other N-channel MOSFETs.

2SK2231(TE16R1,NQ)2SK2231(TE16R1,NQ)
$0.77
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