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The Toshiba Semiconductor and Storage 2SK2231(TE16R1,NQ) is an N-channel MOSFET designed for high-speed, high-voltage switching applications. It utilizes the π-MOS structure to achieve low ON-resistance and fast switching characteristics. The device is suitable for chopper regulators, DC-DC converters, and motor drive circuits. It features a rugged construction with no carrier storage effect, ensuring superior frequency response and easy parallel connection.
Verify the specific TE16R1 tape-and-reel packaging suffix against the manufacturer's ordering guide to ensure compatibility with automated assembly equipment. Confirm RoHS compliance status as indicated in the official datasheet documentation before finalizing procurement specifications.
Select this component for designs requiring high-voltage switching with minimal conduction loss. The π-MOS technology offers a balance of ruggedness and speed. Ensure gate drive voltages align with the enhancement mode requirements specified in the electrical characteristics table.
This part belongs to the standard 2SK series of N-channel MOSFETs from Toshiba. It represents a conventional series utilizing the L2-π-MOSVI or similar generation technology, distinct from the newer U-MOS or DTMOS super-junction lines. It serves as a reliable solution for general-purpose high-voltage switching tasks.
Consult the Toshiba selection guide for equivalent parts within the 2SK series that match the required drain-source voltage and current ratings. Verify pinout compatibility and thermal performance when substituting with other N-channel MOSFETs.