SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 2SK242-4-TB-E is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is designed for high-frequency low-noise amplifier applications, particularly in the VHF and UHF bands. The device features a maximum drain-source voltage of 25V and a continuous drain current of 50mA. Key electrical characteristics include a typical noise figure of 1.3dB at 1GHz and a transition frequency of 6GHz. It is housed in a compact surface-mount package suitable for portable communication equipment.
Verify the specific suffix -4-TB-E against the official onsemi datasheet to confirm pinout and tape-and-reel specifications. Ensure compatibility with RoHS directives if required by the target market. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components.
Select this component when a low-noise N-channel JFET is required for frequencies up to several gigahertz. Compare the noise figure and gain specifications against alternative JFETs like the 2SK932 or CPH3910 based on the specific circuit impedance and bandwidth requirements. Verify that the 25V breakdown voltage meets the system's power supply constraints.
This component belongs to onsemi's discrete transistor portfolio, specifically within the JFET category. It is part of a series of RF transistors designed for analog signal processing. The 2SK242 series is widely recognized in the communications industry for its reliability in low-noise applications.
Potential substitutes include the 2SK932-24-TB-E and CPH3910-TL-E. Verify pinout compatibility and ensure that the substitute's noise figure and transition frequency meet or exceed the original design specifications. Consult onsemi documentation for approved cross-references.