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Product Detailed Parameters
- Description：DISCRETE / POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK2499-S-AZ is an N-channel power MOSFET manufactured by Renesas Electronics Corporation, designed for switching and amplification applications in industrial use. Key electrical parameters include a maximum drain-source on-resistance of 9 mΩ at 10V gate voltage and 14 mΩ at 4.5V gate voltage. The device features a typical total gate charge of 152 nC and a typical input capacitance of 3400 pF. It operates within an industrial qualification level and supports single-channel configuration.
Feature Summary
- N-channel power MOSFET architecture optimized for industrial switching and amplification tasks
- Low on-resistance characteristics to minimize conduction losses in power circuits
- Industrial qualification level ensuring reliability in demanding operational environments
Applications
- Industrial power switching systems
- Amplification circuits requiring high-efficiency transistor performance
- General-purpose industrial electronic equipment
Procurement Notes
Verify the specific suffix 'S' against official Renesas documentation to confirm packaging or variant distinctions. Ensure the component meets required industrial temperature ranges and voltage ratings for your specific circuit design before integration.
Selection Notes
Select this component for applications requiring low RDS(on) at standard logic-level gate voltages. Consider the 152 nC gate charge for switching speed requirements. Confirm compatibility with industrial-grade environmental standards and single-channel topology needs.
Part Context
This part belongs to Renesas' discrete power MOSFET portfolio, specifically tailored for industrial markets. It complements other N-channel devices offering similar voltage and current handling capabilities within the manufacturer's switching transistor lineup.
Replacement Considerations
Check for direct substitutes like the 2SK2499-AZ if packaging differences are irrelevant. Verify pinout and electrical parameter equivalence with other N-channel MOSFETs from Renesas or alternative manufacturers before substitution.
