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Product Detailed Parameters
- Description：MOSFET N-CH 60V 5A CPT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：135mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：520 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：20W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：CPT3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The ROHM Semiconductor 2SK2503 is a silicon N-channel MOSFET designed for small switching applications. It features a low on-resistance and fast switching speed, supporting a wide safe operating area (SOA). The device operates with a low-voltage drive of 4V, facilitating easy drive circuit design. Key electrical characteristics include a drain-source voltage rating of 60V and a continuous drain current capacity of 5A at 25°C ambient temperature.
Feature Summary
- Low on-resistance for efficient power handling
- Fast switching speed for high-frequency operation
- Wide safe operating area (SOA)
- Low-voltage drive capability at 4V
Applications
- Audio visual equipment
- Office automation equipment
- Communications devices
- Electrical appliances
- Electronic toys
Procurement Notes
Verify the specific ordering suffix to confirm packaging type and reel specifications. Confirm RoHS compliance status and check for any export control classifications under Japanese regulations before finalizing procurement. Ensure the component meets standard reliability requirements for ordinary electronic equipment rather than safety-critical automotive or medical applications.
Selection Notes
Select this component for general-purpose switching tasks requiring a 60V rating and 5A current capacity. The 4V logic-level drive simplifies interface with microcontrollers or standard logic gates. Consider the thermal performance and SOA limits when designing for high-duty cycle operations or elevated ambient temperatures.
Part Context
This part belongs to ROHM's small switching transistor series. It utilizes a silicon N-channel structure optimized for compact surface-mount packages. The device is intended for use in consumer electronics and general industrial equipment where moderate power switching and fast response times are required.
Replacement Considerations
Consult ROHM sales representatives for direct substitutes if higher reliability ratings are needed. Verify pinout compatibility and electrical parameters such as Vgs(th) and Rds(on) when evaluating alternative N-channel MOSFETs from other manufacturers.
