ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：NCH 10V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK2532-TL-E is an N-channel silicon MOSFET manufactured by onsemi, formerly Sanyo. It features a drain-to-source voltage rating of 250V and a continuous drain current of 10A. The device exhibits a maximum on-resistance of 0.39 ohms. It operates in enhancement mode with a single element configuration and includes a built-in diode. The component is housed in a small outline package with three pins, designed for surface mount applications.
Feature Summary
- N-channel silicon metal-oxide semiconductor field-effect transistor
- Single element configuration with integrated body diode
- Surface mountable small outline package design
Applications
- General-purpose switching devices
- High-density mounting applications
- Miniaturized electronic end products
Procurement Notes
Verify the manufacturer origin carefully, as the part was originally produced by Sanyo Semiconductor before its acquisition by onsemi. Confirm that the specific suffix matches the required packaging format. Ensure the component meets all relevant environmental compliance standards required for your specific manufacturing region and application constraints.
Selection Notes
Select this component when a robust N-channel MOSFET with high voltage capability is required for general switching tasks. The low on-resistance supports efficient power handling. Consider the thermal characteristics and package limitations to ensure adequate heat dissipation within the intended operating environment and circuit layout constraints.
Part Context
This component belongs to the family of power field-effect transistors designed for reliable switching operations. Originally developed by Sanyo, these parts are now managed under the onsemi portfolio. The technology utilizes silicon metal-oxide semiconductor construction to provide stable performance in various electronic circuits requiring moderate current and high voltage isolation.
