2SK2544(F)

Description：MOSFET N-CH 600V 6A TO220AB
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:c7114e01337f Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 6A TO220AB
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.25Ohm @ 3A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：80W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Download product information

2SK2544(F)

Overview

The Toshiba 2SK2544 is a Silicon N-Channel MOS Type Field Effect Transistor designed for switching regulator applications. It features a low drain-source ON-resistance of 0.9 Ω (typical) and high forward transfer admittance of 5.5 S (typical). The device supports a maximum drain-source voltage of 600 V and a continuous DC drain current of 6 A, with a pulse current rating of 24 A. Key electrical characteristics include a gate threshold voltage range of 2.0 to 4.0 V and a maximum leakage current of 100 μA at 600 V. Thermal performance includes a channel-to-case thermal resistance of 1.56 °C/W.

Feature Summary

Low drain-source ON-resistance for efficient power handling
High forward transfer admittance for improved gain
Low leakage current ensuring stable operation under high voltage
Enhancement mode operation with defined gate threshold voltage

Applications

Switching Regulator Applications
General electronics applications including computers and office equipment
Industrial robots and measuring equipment
Home electronics appliances

Procurement Notes

Verify the specific ordering suffix or marking configuration required, as indicated by lot number variations in the datasheet. Confirm environmental compliance status, such as RoHS compatibility, directly with Toshiba sales representatives, as this depends on the specific production batch and labeling. Ensure design reliability by consulting the Toshiba Semiconductor Reliability Handbook regarding derating concepts and methods before finalizing component selection.

Selection Notes

Select this component for designs requiring high-voltage switching capabilities up to 600 V. Consider the 0.9 Ω typical ON-resistance for conduction loss calculations and the 80 W power dissipation rating for thermal management planning. Verify that the gate drive voltage aligns with the 2.0 to 4.0 V threshold range for optimal enhancement mode operation. Evaluate the package thermal resistance against the expected ambient conditions to ensure the channel temperature remains within the 150 °C limit.

Part Context

This part belongs to the Toshiba Silicon N-Channel MOS Type family, specifically utilizing π−MOSV technology. It is housed in a JEDEC TO-220AB / JEITA SC-46 package, weighing approximately 2.0 g. The device is intended for general electronics applications and is not warranted for use in systems requiring extraordinarily high reliability, such as aerospace, medical, or nuclear facilities, unless explicitly permitted.