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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK2595AXTB-E is an N-channel silicon power MOSFET manufactured by Renesas Electronics Corporation. It is classified as a radio frequency (RF) power field-effect transistor designed for the ultra-high frequency band. The device utilizes a metal-oxide semiconductor structure and is intended for high-frequency amplification applications.
Feature Summary
- N-channel silicon construction
- Ultra-high frequency band operation
- Metal-oxide semiconductor FET architecture
Applications
- UHF power amplification
- RF signal processing circuits
Procurement Notes
Verify the exact suffix against official Renesas documentation, as variants such as -E or -XTL may exist. Confirm package type and pinout compatibility with your design. Request the specific datasheet to validate electrical characteristics before integration. Ensure the component meets all relevant regulatory standards for RF equipment.
Selection Notes
Select this component for designs requiring UHF band performance. Evaluate thermal management requirements based on the specific application's power dissipation. Compare alternative Renesas models like the 2SK2596BXTL-E if different specifications are needed. Verify that the N-channel configuration aligns with the circuit topology.
Part Context
This part belongs to Renesas' discrete semiconductor portfolio, specifically within the single FET category. It is related to other UHF power amplifiers in the series, such as the 2SK2596BXTL-E. The product line focuses on silicon-based solutions for high-frequency electronic systems.
Replacement Considerations
The 2SK2596BXTL-E is a documented related N-channel MOS FET UHF power amplifier from Renesas Technology Corp. Verify functional equivalence through detailed datasheet comparison before substitution.
