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The 2SK2725-E is a silicon N-channel MOSFET manufactured by Renesas Electronics Corporation. It is designed for high-speed power switching applications. The component features a maximum drain-source voltage of 500V and a continuous drain current rating of 5A. It utilizes a TO-220CFM package configuration.
Verify the latest product information with a Renesas Electronics sales office before purchasing or using this component. All data included in official documentation is current as of the issuance date. Confirm specific ordering suffixes and availability directly through authorized channels to ensure compliance with current specifications.
Select this component for applications requiring an N-channel MOSFET with 500V blocking capability and 5A current handling. Ensure the thermal management design accommodates the TO-220CFM package constraints. Validate that the high-speed switching characteristics align with the target circuit requirements.
This part belongs to the single FET category within Renesas' power semiconductor portfolio. It is classified as a discrete silicon N-channel MOSFET intended for general-purpose high-voltage switching tasks. The manufacturer provides datasheets detailing electrical characteristics and thermal performance metrics.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Renesas technical support for qualified alternatives if direct replacement is required.