2SK2725-E

2SK2725-E

$3.67
  • Description:MOSFET N-CH 500V 5A
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk

SKU:61ff0af808d6 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 500V 5A
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SK2725-E

Overview

The 2SK2725-E is a silicon N-channel MOSFET manufactured by Renesas Electronics Corporation. It is designed for high-speed power switching applications. The component features a maximum drain-source voltage of 500V and a continuous drain current rating of 5A. It utilizes a TO-220CFM package configuration.

Feature Summary

  • Engineered for high-speed power switching operations
  • Utilizes silicon N-channel technology

Applications

  • High-speed power switching circuits

Procurement Notes

Verify the latest product information with a Renesas Electronics sales office before purchasing or using this component. All data included in official documentation is current as of the issuance date. Confirm specific ordering suffixes and availability directly through authorized channels to ensure compliance with current specifications.

Selection Notes

Select this component for applications requiring an N-channel MOSFET with 500V blocking capability and 5A current handling. Ensure the thermal management design accommodates the TO-220CFM package constraints. Validate that the high-speed switching characteristics align with the target circuit requirements.

Part Context

This part belongs to the single FET category within Renesas' power semiconductor portfolio. It is classified as a discrete silicon N-channel MOSFET intended for general-purpose high-voltage switching tasks. The manufacturer provides datasheets detailing electrical characteristics and thermal performance metrics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Renesas technical support for qualified alternatives if direct replacement is required.

2SK2725-E2SK2725-E
$3.67
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