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Product Detailed Parameters
- Description：MOSFET N-CH 500V 20A TO3P
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：290mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3300 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：150W (Ta)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P
- Package / Case：TO-3P-3, SC-65-3
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Overview
The Renesas 2SK2729-E is an N-channel single power MOSFET designed for high-voltage switching applications. It features a drain-to-source voltage rating of 500V and supports a continuous drain current of 20A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 0.29 ohms when driven by a gate-source voltage of 10V at a drain current of 10A. Packaged in the TO-3P format, it provides robust thermal performance suitable for industrial power management systems requiring reliable high-power operation.
Feature Summary
- High breakdown voltage capability for demanding power circuits
- Low on-resistance to minimize conduction losses
- Durable TO-3P package for effective heat dissipation
Applications
- Industrial motor control systems
- High-voltage DC-DC converter stages
- Power supply unit output switches
Procurement Notes
Verify the specific suffix designation during acquisition, as variants may exist within the product line. Confirm that the received component matches the exact part number specifications regarding voltage and current ratings. Ensure storage conditions comply with manufacturer guidelines to maintain device integrity prior to assembly and soldering processes.
Selection Notes
Select this component when circuit requirements demand a 500V blocking capability combined with moderate current handling. The low on-resistance makes it efficient for applications where power loss reduction is critical. Evaluate thermal management solutions to ensure the junction temperature remains within safe operating limits under continuous load conditions.
Part Context
This device belongs to the Renesas power MOSFET portfolio, which focuses on silicon-based switching technologies. The TO-3P packaging distinguishes it from surface-mount alternatives, offering a through-hole solution for higher power density needs. It serves as a discrete switching element rather than an integrated driver or controller module.
Replacement Considerations
Consult official substitution lists for compatible equivalents. Verify that any alternative part maintains identical voltage ratings, current capacity, and package dimensions to ensure mechanical and electrical compatibility without redesigning the host circuit board.
FAQ
What is the maximum gate-source voltage rating?
Specific maximum gate-source voltage limits are not detailed in the provided summary data; consult the full datasheet for absolute maximum ratings.
Is this device suitable for automotive use?
The provided documentation does not explicitly confirm automotive qualification grades for this specific part number; verify quality grade specifications in the complete technical sheet.
