2SK2854(TE12L,F)

2SK2854(TE12L,F)

  • Description:RF MOSFET 10V PW-MINI
  • Series:-

SKU:3df980d31363 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 10V PW-MINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:849MHz
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):500mA
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:23dBmW
  • Voltage - Rated:10 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:TO-243AA
  • Supplier Device Package:PW-MINI
  • Configuration:N-Channel

Download product information

2SK2854(TE12L,F)

Overview

The 2SK2854(TE12L,F) is a silicon N-channel MOS field-effect transistor manufactured by Toshiba Semiconductor and Storage. It is designed for UHF band amplifier applications. The device features an N-channel MOS structure optimized for high-frequency performance. It utilizes the TE12L surface-mount package, which provides a compact footprint suitable for automated assembly processes in electronic circuits requiring RF signal amplification.

Feature Summary

  • N-channel MOS construction for UHF band operation
  • Surface-mount packaging for automated assembly

Applications

  • UHF band amplifier circuits

Part Context

This component belongs to the 2SK2854 product family from Toshiba Semiconductor and Storage. The suffix (TE12L,F) indicates specific packaging and environmental compliance attributes defined by the manufacturer. It is categorized as a discrete semiconductor device within the MOSFET segment.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verification of functional equivalence requires consulting official cross-reference data or manufacturer substitution guides.

2SK2854(TE12L,F)2SK2854(TE12L,F)

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