2SK2933-E

2SK2933-E

$1.31
  • Description:2SK2933 - N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Renesas
  • Package:Bulk

SKU:255ca6d1f1cf Category: Brand:

  
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Product Detailed Parameters

  • Description:2SK2933 - N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Renesas
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:52mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):25W (Ta)
  • Operating Temperature:150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220CFM
  • Package / Case:TO-220-3 Full Pack

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2SK2933-E

Overview

The Renesas 2SK2933-E is an N-channel MOSFET designed for high-speed switching applications. It features a low on-resistance and fast switching characteristics suitable for power management circuits. The device is housed in a compact package to facilitate efficient thermal management and space-saving designs in electronic systems.

Feature Summary

  • Optimized for high-efficiency power conversion
  • Enhanced thermal performance through advanced packaging
  • Designed for reliable operation in demanding environments

Applications

  • DC-DC converters
  • Power supply units
  • Motor control circuits

Procurement Notes

Verify the specific suffix 'E' against official Renesas documentation to confirm exact binning or tape-and-reel specifications. Ensure compatibility with your PCB footprint and thermal requirements by cross-referencing the mechanical drawing in the datasheet. Confirm lead-free status if required by your manufacturing standards.

Selection Notes

Select this component when low conduction losses and fast switching speeds are critical. Evaluate the maximum drain-source voltage and continuous current ratings against your circuit's peak loads. Consider the gate charge parameters for driving efficiency in high-frequency applications.

Part Context

This part belongs to Renesas' discrete semiconductor portfolio, focusing on power MOSFETs. It complements other devices in their lineup for complete power solution designs. The product line emphasizes reliability and performance for industrial and consumer electronics markets.

Replacement Considerations

Consult official Renesas substitution guides for verified equivalents. Ensure pinout compatibility and electrical parameter alignment before replacing. Generic substitutes may not match the original performance or reliability standards.

2SK2933-E2SK2933-E
$1.31
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