2SK2962,T6F(J

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:600cb8900a71 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：1A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92MOD
Package / Case：TO-226-3, TO-92-3 Long Body

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2SK2962,T6F(J

Overview

The Toshiba 2SK2962 is a silicon N-channel enhancement-mode MOSFET designed for chopper regulators, DC-DC converters, and motor drives. It features a JEDEC TO-92MOD package with a maximum drain-source voltage of 100 V and a continuous DC drain current of 1 A. The device exhibits a typical low on-resistance of 0.5 Ω at VGS = 4 V and a high forward transfer admittance of 1.2 S. Gate threshold voltage ranges from 0.8 to 2.0 V, supporting 4-V gate drive applications.

Feature Summary

Enhancement mode operation with low gate threshold voltage suitable for 4-V gate drive systems
Low drain-source on-resistance for efficient power switching in regulated circuits
High forward transfer admittance providing strong control characteristics
Robust avalanche energy rating for handling inductive load transients

Applications

Chopper regulator circuits
DC-DC converter designs
Motor drive systems

Procurement Notes

Verify the specific ordering suffix (e.g., T6F(J)) against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Confirm package type and pinout alignment with the target PCB footprint before procurement. Ensure design parameters remain within absolute maximum ratings to maintain reliability.

Selection Notes

Select this component for applications requiring a compact N-channel MOSFET with moderate voltage ratings and low on-resistance. Consider the thermal resistance of 138 °C/W when designing heat dissipation strategies. Verify that the required gate drive voltage aligns with the specified threshold range and that the package style fits the assembly constraints.

Part Context

This part belongs to Toshiba's L²-π-MOSV series of silicon N-channel field effect transistors. It is engineered specifically for general electronics applications including computers, office equipment, and industrial robots. The device utilizes a standard TO-92MOD form factor, balancing performance with space efficiency for consumer and industrial electronic designs.

Replacement Considerations

Consult official Toshiba substitution guides or datasheets for verified equivalent parts. Do not assume cross-compatibility based solely on electrical parameters without verifying package dimensions and pin configurations.