2SK2962,T6F(M

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:008aba9930c3 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：1A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92MOD
Package / Case：TO-226-3, TO-92-3 Long Body

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2SK2962,T6F(M

Overview

The Toshiba 2SK2962 is a silicon N-channel enhancement-mode MOSFET utilizing L²-π-MOSV technology. It features a drain-source voltage rating of 100 V and a continuous DC drain current of 1 A at 25°C, with a pulse capability of 3 A. The device exhibits a typical drain-source on-resistance of 0.5 Ω at VGS = 4 V and ID = 0.5 A, alongside a forward transfer admittance of 1.2 S. Gate threshold voltage ranges from 0.8 to 2.0 V. It operates within a channel temperature range up to 150°C and is housed in a TO-92MOD package.

Feature Summary

Enhancement mode operation with low gate threshold voltage for efficient drive
Low drain-source on-resistance for reduced conduction losses
High forward transfer admittance for improved switching performance
Robust avalanche energy rating for handling transient loads

Applications

Chopper regulator circuits
DC-DC converter designs
Motor drive systems

Procurement Notes

Verify the specific ordering suffix (e.g., T6F) against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, as markings indicate variations. Ensure the component is sourced from authorized distributors to guarantee authenticity. Review the absolute maximum ratings carefully during design integration to prevent exceeding thermal or electrical limits under heavy load conditions.

Selection Notes

Select this component for applications requiring a compact N-channel MOSFET with a 100 V breakdown voltage and moderate current handling capabilities. The low on-resistance makes it suitable for power switch applications where efficiency is critical. Consider the TO-92MOD package constraints regarding thermal dissipation and ensure adequate heat sinking if operating near the maximum rated current or ambient temperature limits.

Part Context

This part belongs to Toshiba's field effect transistor lineup based on silicon N-channel MOS technology. It is designed specifically for general electronics applications including computers, office equipment, and industrial robots. The device is not intended for use in safety-critical systems such as medical equipment, aerospace, or automotive transportation control without explicit permission.

Replacement Considerations

Consult official Toshiba cross-reference guides for verified substitutes. Ensure any replacement maintains equivalent drain-source voltage, current ratings, and package dimensions. Verify that alternative components meet the same thermal resistance and switching speed requirements for the specific chopper or motor drive application.