ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH TO92MOD
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92MOD
- Package / Case：TO-226-3, TO-92-3 Long Body
Download product information
Overview
The Toshiba Semiconductor and Storage 2SK2962(TE6,F,M) is a silicon N-channel MOS field-effect transistor utilizing L²-π-MOSV technology. It features a drain-source breakdown voltage of 100 V, a continuous DC drain current rating of 1 A, and a pulse drain current capacity of 3 A. The device exhibits a typical drain-source ON resistance of 0.5 Ω at VGS = 4 V and ID = 0.5 A, with a maximum of 0.7 Ω at VGS = 10 V. Gate threshold voltage ranges from 0.8 V to 2.0 V. It operates within a channel temperature range up to 150°C and is housed in a TO-92MOD package.
Feature Summary
- Utilizes L²-π-MOSV technology for enhanced switching performance
- Supports low-voltage gate drive requirements
- Features high forward transfer admittance for efficient control
- Designed for chopper regulators, DC-DC converters, and motor drives
Applications
- Chopper Regulators
- DC-DC Converters
- Motor Drive Applications
Procurement Notes
Verify the specific ordering suffix (TE6,F,M) against official Toshiba documentation to confirm packaging format, tape-and-reel specifications, and environmental compliance status such as RoHS compatibility. Confirm that the component meets all absolute maximum ratings for your intended operating conditions before finalizing procurement.
Selection Notes
Select this component for applications requiring a 100 V rated N-channel MOSFET with low ON resistance and fast switching characteristics. Ensure the design accommodates the thermal resistance of 138 °C/W for the TO-92MOD package. Verify that the gate drive voltage aligns with the specified threshold and ON resistance test conditions.
Part Context
This part belongs to the 2SK2962 series of silicon N-channel MOS type field effect transistors manufactured by Toshiba Semiconductor and Storage. The series is engineered for general electronics applications including computers, office equipment, and industrial robots, specifically targeting power switching roles in converters and motor controls.
Replacement Considerations
Consult official Toshiba documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, electrical parameters, and package dimensions.
