2SK2989,F(J

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:71a87e98be90 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH TO92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：5A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92MOD
Package / Case：TO-226-3, TO-92-3 Long Body

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2SK2989,F(J

Overview

The Toshiba 2SK2989 is a silicon N-channel MOS field-effect transistor utilizing π-MOSVI technology, designed for chopper regulators, DC-DC converters, and motor drives. It features a low drain-source ON resistance of 120 mΩ (typical) at VGS=10V and ID=2.5A, alongside a high forward transfer admittance of 2.6 S. The device supports a maximum drain-source voltage of 50 V and continuous drain current of 5 A. Key electrical characteristics include a gate threshold voltage range of 1.0 to 2.2 V and a maximum leakage current of 100 μA.

Feature Summary

Utilizes π-MOSVI technology for enhanced performance in switching applications
Provides low drain-source ON resistance for efficient power handling
Features high forward transfer admittance for improved gain
Designed with low leakage current specifications

Applications

Chopper Regulators
DC-DC Converters
Motor Drive Circuits

Procurement Notes

Verify the specific ordering suffix (e.g., F or J) against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm package type JEDEC TO-92MOD and handle as an electrostatic sensitive device during procurement and assembly processes.

Selection Notes

Select this component for designs requiring a 50 V N-channel MOSFET with moderate current capabilities up to 5 A. Ensure the gate drive voltage meets the threshold requirements of 1.0 to 2.2 V. Consider the thermal resistance of 138 °C/W when designing heat dissipation strategies for the TO-92MOD package.

Part Context

This part belongs to Toshiba's discrete semiconductor lineup, specifically engineered for general electronics applications including computers, office equipment, and industrial robots. It is not intended for use in aerospace, medical, or automotive safety-critical systems unless explicitly permitted by manufacturer guidelines.