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Product Detailed Parameters
- Description：MOSFET N-CH TO92MOD
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92MOD
- Package / Case：TO-226-3, TO-92-3 Long Body
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Overview
The Toshiba Semiconductor and Storage 2SK2989(TPE6,F,M) is a silicon N-channel MOS type (π-MOSVI) field effect transistor. It features a low drain-source ON resistance of 120 mΩ typical at VGS = 10 V, ID = 2.5 A. The device has a drain-source voltage rating of 50 V and supports continuous DC drain currents up to 5 A. It operates with a gate threshold voltage between 1.0 V and 2.2 V. The component utilizes a JEDEC TO-92MOD package.
Feature Summary
- Utilizes π-MOSVI technology for enhanced performance
- Features low forward transfer admittance of 2.6 S typical
- Provides low leakage current with maximum 100 μA at VDS = 50 V
- Operates as an enhancement-mode device
Applications
- Chopper Regulator circuits
- DC-DC Converter designs
- Motor Drive systems
Procurement Notes
Verify the specific ordering suffixes against official Toshiba documentation to confirm exact packaging and environmental compliance status. Confirm that the selected variant matches the required JEDEC TO-92MOD package dimensions and thermal characteristics for your design constraints.
Selection Notes
Select this component based on its 50 V drain-source voltage capability and 5 A continuous current rating. Ensure the application circuit maintains the channel temperature below 150°C. Consider the 138 °C/W thermal resistance when designing appropriate heat dissipation strategies for the intended operating conditions.
Part Context
This part belongs to the Toshiba Silicon N Channel MOS Type family utilizing π-MOSVI technology. It is designed specifically for switching applications requiring low ON resistance and high forward transfer admittance. The device is housed in a compact TO-92MOD package suitable for general electronics applications.
Replacement Considerations
Consult official Toshiba documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' components without verifying electrical parameters and pin configurations.
