2SK2995(F)

Description：MOSFET N-CH 250V 30A TO3PIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube

SKU:d31a70a68f0d Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 250V 30A TO3PIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：68mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：132 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5400 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：90W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P(N)IS
Package / Case：TO-3P-3, SC-65-3

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2SK2995(F)

Overview

The Toshiba 2SK2995 is a silicon N-channel MOS type field effect transistor utilizing π-MOSV technology. It features a drain-source voltage rating of 250 V and a continuous DC drain current capacity of 30 A at 25°C case temperature. The device exhibits a typical low drain-source ON resistance of 48 mΩ and a high forward transfer admittance of 30 S. Thermal characteristics include a channel-to-case thermal resistance of 1.39 °C/W. The component supports pulse drain currents up to 120 A and single pulse avalanche energy of 925 mJ, packaged in a TO-220AB style housing.

Feature Summary

Utilizes π-MOSV technology for enhanced performance
Features low drain-source ON resistance for efficiency
Provides high forward transfer admittance
Supports significant avalanche energy handling

Applications

Chopper regulator circuits
DC-DC converter designs
Motor drive systems

Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm package marking details and lot number formatting requirements with authorized distributors or sales representatives prior to procurement to ensure alignment with project specifications.

Selection Notes

Select this component for applications requiring robust N-channel switching capabilities with moderate voltage ratings. Evaluate thermal management strategies carefully given the specified power dissipation limits. Ensure gate drive voltages remain within the absolute maximum ratings to prevent breakdown. Consider the device's capacitance parameters for high-frequency switching performance requirements.

Part Context

This part belongs to the family of silicon N-channel MOSFETs designed by Toshiba Semiconductor. It is engineered for general electronics applications including industrial equipment and home appliances. The device is not intended for use in nuclear facilities, aerospace, medical equipment, or transportation safety systems unless explicitly permitted.

Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying electrical parameters and pin configurations.