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Product Detailed Parameters
- Description：MOSFET N-CH 200V 18A TO220F
- Series：-
- Mfr：Sanken Electric USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：175mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：850 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：35W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F
- Package / Case：TO-220-3 Full Pack
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Overview
The Sanken Electric USA Inc. 2SK3003 is an N-channel Power MOSFET rated for a drain-source voltage of 200V and a continuous drain current of 18A. It features a maximum on-resistance of 175mΩ at VGS=10V and ID=9A, with a threshold voltage ranging from 2.0V to 4.0V. The device supports a pulsed drain current of 72A and dissipates up to 35W of power. Key electrical characteristics include a reverse diode forward voltage of 1.5V and a gate-source leakage current of ±100nA.
Feature Summary
- N-channel metal-oxide semiconductor field-effect transistor construction
- Integrated body diode with specified reverse recovery time
- High avalanche energy capability of 120mJ under defined conditions
Applications
- Power switching circuits requiring high voltage isolation
- Motor drive systems utilizing N-channel topology
- General purpose power conversion applications
Procurement Notes
Verify the specific package variant required, as the datasheet indicates FM20 (TO-220F) and FM100 (TO-3PF) options. Confirm that the component status is acceptable for your design lifecycle, noting it is marked Not Recommended for New Designs. Ensure compliance with UL approval requirements if applicable to your safety standards. Check lead times and availability as this may be a legacy part.
Selection Notes
Select this component when a 200V N-channel MOSFET with 18A continuous current capacity is needed. Consider the 175mΩ maximum RDS(on) for thermal management in high-current paths. Evaluate the 120mJ avalanche energy rating for inductive load protection needs. Compare the TO-220F or TO-3PF packages against your board space and mounting constraints.
Part Context
The 2SK3003 belongs to Sanken Electric's discrete semiconductor lineup, specifically within their Power Field-Effect Transistor category. It is designed for robust power handling in industrial and automotive environments. The device utilizes standard through-hole packaging formats suitable for high-power dissipation scenarios.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult Sanken Electric directly for recommended alternatives or updated series replacements.
