2SK3018

$0.09

Description：30V 100MA [email protected],50MA 200MW 2V 1
Series：-
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5c0e7b03efc9 Category: Single FETs, MOSFETs Brand: Shenzhen Slkormicro Semicon Co., Ltd.

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Product introduction

Product Detailed Parameters

Description：30V 100MA [email protected],50MA 200MW 2V 1
Series：-
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100mA
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7.5Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id：2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：200mW
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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2SK3018

Overview

The S9018 is an NPN RF transistor manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It features a maximum collector-emitter voltage of 15V and a continuous collector current of 50mA. The device has a maximum power dissipation of 200mW and a transition frequency of 800MHz. DC current gain (hFE) is specified at a minimum of 70 when tested at 1mA collector current and 5V collector-emitter voltage. It operates within a junction temperature range up to 150°C and is housed in a surface-mount SOT-23 package.

Feature Summary

NPN bipolar junction transistor designed for radio frequency applications
Surface mount construction in a compact SOT-23 package
Capable of high-frequency operation with an 800MHz transition frequency

Applications

RF signal amplification circuits
High-frequency switching applications
General-purpose small-signal amplification

Procurement Notes

Verify the manufacturer designation as Shenzhen Slkormicro Semicon Co., Ltd. against official component markings or datasheets. Confirm the specific package type is SOT-23 and that the electrical ratings match the required circuit parameters, specifically the 15V breakdown voltage and 200mW power dissipation limits. Ensure compliance with RoHS3 standards if environmental regulations apply to the assembly process.

Selection Notes

Select this component for designs requiring an NPN transistor with moderate RF performance and low power consumption. The 15V rating suits low-voltage logic interfaces, while the 800MHz transition frequency supports basic RF tasks. Verify that the SOT-23 footprint aligns with the PCB layout constraints and that the thermal management strategy accommodates the 200mW dissipation limit under expected operating conditions.

Part Context

This part belongs to the category of discrete bipolar transistors, specifically optimized for radio frequency use. It serves as a fundamental active component in analog and mixed-signal circuits where small-signal amplification or high-speed switching is required. The SOT-23 packaging facilitates automated surface-mount assembly, making it suitable for consumer electronics and portable devices.