2SK3018W

$0.10

Description：30V 300MA 350MW 1 N-CHANNEL SOT-
Series：*
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c3240f6e2cca Category: Single FETs, MOSFETs Brand: Shenzhen Slkormicro Semicon Co., Ltd.

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Product introduction

Product Detailed Parameters

Description：30V 300MA 350MW 1 N-CHANNEL SOT-
Series：*
Mfr：Shenzhen Slkormicro Semicon Co., Ltd.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
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Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
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Supplier Device Package：-
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2SK3018W

Overview

The 2SK3018W is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Shenzhen SLKORMicro Semicon Co., Ltd. It utilizes Trench Power MV MOSFET technology and is housed in a SOT-323 package. Key electrical parameters include a Drain-Source Voltage (VDS) of 30V, a continuous Drain Current (ID) of 300mA, and a Pulsed Drain Current (IDM) of 1.5A. The device features low on-resistance, rated at less than 8.0 ohms at VGS=10V and less than 13.0 ohms at VGS=4.5V. It offers ESD protection up to 2.5KV (HBM), low input capacitance of 18pF, and fast switching capabilities suitable for logic-level interfaces.

Feature Summary

Utilizes Trench Power MV MOSFET technology for efficient voltage-controlled small signal switching.
Features low input and output leakage currents combined with low input capacitance for improved performance.
Provides robust electrostatic discharge (ESD) protection rated up to 2.5KV under Human Body Model conditions.
Designed for fast switching speeds and direct interface compatibility with standard logic families.

Applications

Battery operated systems
Solid-state relays
Direct logic-level interface applications including TTL and CMOS

Procurement Notes

Verify the specific ordering suffix 'W' against official manufacturer documentation to confirm exact packaging configuration and reel specifications. Ensure that the requested component matches the precise electrical ratings and thermal characteristics defined in the datasheet. Confirm compliance with relevant environmental standards prior to procurement.

Selection Notes

Select this component for applications requiring a compact N-channel switch with 30V capability and 300mA current handling. The low on-resistance values at both 10V and 4.5V gate drives make it suitable for various logic levels. Consider the SOT-323 package size for space-constrained designs requiring high reliability and ESD protection.

Part Context

This component is part of the discrete semiconductor transistor portfolio offered by Shenzhen SLKORMicro Semicon Co., Ltd. The manufacturer specializes in power devices and small signal transistors designed for modern electronic applications. The 2SK3018W represents their implementation of trench MOSFET technology within a standard surface-mount footprint.

Replacement Considerations

Consult official substitution guides from the manufacturer for verified equivalent part numbers. Do not assume cross-compatibility with other brands without verifying pinout, voltage ratings, and thermal resistance parameters.