2SK3019TL

$0.27

Description：MOSFET N-CH 30V 100MA EMT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0548b531d8a6 Category: Single FETs, MOSFETs Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 100MA EMT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
Rds On (Max) @ Id, Vgs：8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id：1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：13 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：150mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：EMT3
Package / Case：SC-75, SOT-416

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2SK3019TL

Overview

The 2SK3019TL is a silicon N-channel MOSFET designed for small switching applications. It features a low voltage drive capability of 2.5V, making it suitable for portable equipment. The device offers low on-resistance and fast switching speeds. Key electrical parameters include a drain-source voltage (V_DSS) of 30V, a continuous drain current (I_D) of 100mA, and a gate threshold voltage (V_GS(th)) ranging from 0.8V to 1.5V. The static drain-source on-state resistance (R_DS(on)) is specified at 1.0Ω when V_GS=4V and I_D=10mA, and 1.5Ω when V_GS=2.5V and I_D=1mA. The total power dissipation is 200mW at Tc=25°C. The component is housed in an EMT3 package (SOT-416/SC-75A).

Feature Summary

Low voltage drive capability at 2.5V optimizes performance for portable equipment.
Fast switching speed supports efficient signal processing.
Integrated gate protection diode safeguards against static electricity.
Design facilitates easy parallel operation.

Applications

Interfacing circuits
Small signal switching

Procurement Notes

Verify the specific ordering suffix 'TL' corresponds to the taping packaging format containing 3000 units per reel. Confirm that the part number matches the standard 2SK3019 specifications regarding the EMT3 package and electrical ratings. Ensure compatibility with the required surface mount mounting style and check for any recent product change notices affecting supply status or documentation.

Selection Notes

Select this component for designs requiring a compact N-channel MOSFET with low voltage drive characteristics. The 2.5V gate threshold makes it appropriate for battery-powered systems. Consider the 30V drain-source voltage rating and 100mA current limit for load requirements. The SOT-416 package size is suitable for space-constrained PCB layouts.

Part Context

The 2SK3019 series consists of silicon N-channel MOSFETs intended for general-purpose small switching tasks. The TL suffix indicates the tape-and-reel packaging configuration. This family emphasizes low on-resistance and ease of drive circuit design, targeting applications where power efficiency and physical footprint are critical constraints.

Replacement Considerations

The BD5212G-1 is listed as a similar specification replacement for the UMZ33K, but no direct substitute is documented for the 2SK3019 in the provided source material. Verify pinout compatibility if considering alternative N-channel MOSFETs from other manufacturers.