2SK3043

Description：MOSFET N-CH 450V 5A TO220D-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk

SKU:fc962716bad8 Category: Single FETs, MOSFETs Brand: Panasonic Electronic Components

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 450V 5A TO220D-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：450 V
Current - Continuous Drain (Id) @ 25°C：5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.3Ohm @ 3A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：700 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 35W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220D-A1
Package / Case：TO-220-3 Full Pack

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2SK3043

Overview

The Panasonic 2SK3043 is a silicon N-channel power MOSFET housed in a TO-220D-A1 package. It features a drain-source voltage rating of 450 V and a continuous drain current of ±5 A at 25°C case temperature, with a peak current capability of ±10 A. The device guarantees an avalanche energy capacity exceeding 100 mJ and a gate-source voltage limit of ±30 V. Electrical characteristics include a maximum drain-source ON resistance of 1.3 Ω at VGS = 10 V and ID = 3 A, and a forward transfer admittance ranging from 1.8 to 2.5 S. Thermal performance specifies a junction-to-case thermal resistance of 3.5 °C/W.

Feature Summary

Guaranteed avalanche energy capability for robust operation under transient conditions
High-speed switching performance with defined turn-on and turn-off timing parameters
Elimination of secondary breakdown effects across the safe operating area

Applications

Non-contact relay circuits
Solenoid drive systems
Motor drive control equipment
Switching mode regulators

Procurement Notes

Verify the specific lifecycle status on the official Panasonic Semiconductor website before procurement, as this component falls under maintenance or discontinued categories. Confirm that the TO-220D-A1 package dimensions and pinout match your existing board layout requirements. Ensure that design margins account for the specified absolute maximum ratings, particularly regarding thermal dissipation limits and avalanche energy constraints during final validation.

Selection Notes

Select this component for applications requiring high-voltage isolation up to 450 V combined with moderate current handling capabilities. The guaranteed avalanche energy rating makes it suitable for inductive load switching where transient spikes are expected. Evaluate the thermal resistance specifications against your heat sink strategy to ensure the junction temperature remains within the 150 °C limit under continuous operation.

Part Context

This part belongs to the Panasonic Silicon N-channel Power F-MOS FET series, designed for general-purpose power switching applications. It shares functional similarities with other devices in the lineup such as the 2SK3036 and 2SK3033, which also utilize F-MOS technology for low ON-resistance and high-speed switching performance in consumer and industrial electronic equipment.