2SK3044

Description：MOSFET N-CH 450V 7A TO220D-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk

SKU:251843d65ca9 Category: Single FETs, MOSFETs Brand: Panasonic Electronic Components

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 450V 7A TO220D-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：450 V
Current - Continuous Drain (Id) @ 25°C：7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：750mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 40W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220D-A1
Package / Case：TO-220-3 Full Pack

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2SK3044

Overview

The Panasonic 2SK3044 is a silicon N-channel power MOSFET housed in a TO-220D-A1 package. It features a drain-source voltage rating of 450 V and a continuous drain current of ±7 A, with a peak pulse current capability of ±14 A. The device guarantees an avalanche energy capacity exceeding 130 mJ and includes an internal body diode with a forward voltage of -1.7 V at 7 A. Electrical characteristics include a maximum on-resistance of 0.75 Ω at VGS = 10 V and ID = 4 A. Thermal resistance from channel to case is 3.1 °C/W, supporting operation up to a junction temperature of 150 °C.

Feature Summary

Guaranteed high avalanche energy capability for robust transient handling
High-speed switching performance suitable for efficient power conversion
Robust gate-source insulation rated for ±30 V protection

Applications

Non-contact relay circuits
Solenoid drive systems
Motor drive control units
Switching mode regulators

Procurement Notes

Verify the specific lifecycle status before procurement, as the datasheet indicates potential maintenance or discontinuation phases. Confirm that the required package variant matches the TO-220D-A1 specification. Ensure compliance with RoHS directives if applicable to your manufacturing process. Consult official channels for the most recent product standards and availability updates prior to finalizing orders.

Selection Notes

Select this component for applications requiring high-voltage isolation and reliable avalanche ruggedness. The low thermal resistance facilitates effective heat dissipation when paired with appropriate heatsinking. Verify that the gate threshold voltage range aligns with your driver circuit capabilities. Consider the peak drain current limits when designing for inductive load switching scenarios.

Part Context

This part belongs to the Panasonic Power MOSFET series designed for general-purpose power switching. It utilizes standard silicon F-MOS technology to deliver stable performance across varying thermal conditions. The component is engineered for integration into compact power modules where space efficiency and electrical reliability are critical design parameters.