2SK3045

Description：MOSFET N-CH 500V 2.5A TO220D-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk

SKU:092ae142074f Category: Single FETs, MOSFETs Brand: Panasonic Electronic Components

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 500V 2.5A TO220D-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：330 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 30W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220D-A1
Package / Case：TO-220-3 Full Pack

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2SK3045

Overview

The Panasonic 2SK3045 is a silicon N-channel power MOSFET housed in a TO-220D-A1 package. It features a drain-source voltage rating of 500 V and a continuous drain current capacity of ±2.5 A at 25°C case temperature. The device guarantees an avalanche energy capability exceeding 15.6 mJ and a gate-source voltage limit of ±30 V. Electrical characteristics include a maximum forward transfer admittance of 1.5 S and a typical drain-source ON resistance of 3.2 Ω at VGS = 10 V and ID = 1.5 A.

Feature Summary

Guaranteed avalanche energy capability for robust operation under transient conditions
High-speed switching performance with defined turn-on and turn-off timing parameters
No secondary breakdown, ensuring stable safe operating area utilization

Applications

Non-contact relay circuits
Solenoid drive systems
Motor drive applications
Control equipment interfaces
Switching mode regulators

Procurement Notes

Verify the specific lifecycle status on the manufacturer's official website before procurement, as this component may be subject to maintenance or discontinuation phases. Confirm that the required RoHS compliance documentation aligns with your manufacturing standards. Ensure that the TO-220D-A1 package dimensions match your PCB footprint requirements. Validate thermal management solutions against the specified junction-to-case and junction-to-ambient thermal resistance values.

Selection Notes

Select this component for applications requiring high-voltage handling up to 500 V with moderate current capabilities around 2.5 A. Consider the guaranteed avalanche energy when designing circuits prone to inductive load switching transients. Evaluate the thermal resistance specifications to determine appropriate heat sinking strategies for maintaining junction temperatures within the 150 °C limit during continuous operation.

Part Context

This part belongs to the Panasonic Electronic Components silicon N-channel power MOSFET lineup. It utilizes standard JIS C 7030 measuring methods for transistor characterization. The marking symbol K3045 identifies the device on the package surface. Compliance with the EU RoHS Directive (2002/95/EC) is confirmed for this product variant.

Replacement Considerations

Consult the manufacturer's official discontinuation list for verified substitute part numbers. No direct public cross-reference substitutes are provided in the source material.