2SK3046

$1.02

Description：MOSFET N-CH 500V 7A TO220D-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk

SKU:f0aece4ca0d7 Category: Single FETs, MOSFETs Brand: Panasonic Electronic Components

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 500V 7A TO220D-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1Ohm @ 4A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1200 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 40W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220D-A1
Package / Case：TO-220-3 Full Pack

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2SK3046

Overview

The Panasonic 2SK3046 is a Silicon N-channel power MOSFET housed in a TO-220D-A1 package. It features a drain-source voltage rating of 500 V and a continuous drain current of ±7 A, with a peak drain current capability of ±14 A. The device guarantees an avalanche energy capacity exceeding 130 mJ and a gate-source voltage limit of ±30 V. Electrical characteristics include a maximum on-resistance of 1.0 Ω at VGS = 10 V and ID = 4 A, and a forward transfer admittance of up to 5.0 S. Thermal resistance from channel to case is specified at 3.1 °C/W.

Feature Summary

Guaranteed avalanche energy capability for robust operation under transient conditions
High-speed switching performance with defined turn-on and fall times
No secondary breakdown region ensuring stable safe operating area
Integrated body diode with guaranteed forward voltage characteristics

Applications

Non-contact relay circuits
Solenoid drive systems
Motor drive control equipment
Switching mode regulators

Procurement Notes

Verify the specific lifecycle status before procurement as the component may be classified under maintenance or discontinued stages. Consult official Panasonic Semiconductor channels for the most current product standards and availability information. Ensure design compliance with absolute maximum ratings to prevent failure modes associated with thermal or electrical overstress during handling and mounting processes.

Selection Notes

Select this component for applications requiring high-voltage isolation and reliable switching performance. The TO-220D-A1 package facilitates effective heat dissipation through case mounting. Consider the 500 V drain-source rating and low on-resistance for efficient power management in motor and solenoid drivers. Verify that the thermal resistance requirements align with the intended ambient temperature and heat sink configuration for optimal junction temperature management.

Part Context

This part belongs to the Panasonic Power F-MOS FET series, designed for general electronic equipment and standard applications. It complements other devices in the lineup by offering high voltage tolerance and ruggedness. The series targets industrial control and power supply designs where reliability and switching speed are critical parameters for system performance.

Replacement Considerations

Consult official Panasonic documentation for confirmed substitute part numbers. Cross-referencing requires matching key electrical parameters such as voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without compromising system safety or performance specifications.