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The 2SK3113-AZ is an N-channel DMOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage (VDSS) of 600V and a maximum on-resistance (RDS(ON)) of 4400 mΩ at 10V gate drive. The device supports a continuous drain current (ID) of 2A. It is housed in a TO-252/DPAK standard package type. The component is qualified for industrial applications and is lead-free compliant.
Verify the specific suffix -AZ against the official Renesas datasheet D13336EJ4V0DS00 to confirm pinout and electrical tolerances. Ensure the supplier provides traceability documentation for industrial qualification levels. Confirm that the TO-252 package matches your PCB footprint requirements before finalizing orders.
Select this component when a 600V rated N-channel MOSFET with moderate 2A current capability is required. The 4400 mΩ RDS(ON) suggests suitability for low-current, high-voltage switching tasks where conduction losses are secondary to blocking voltage. Verify thermal management needs given the small DPAK package size.
This part belongs to the 2SK3113 series of N-channel power MOSFETs from Renesas. It is functionally similar to variants like the 2SK3113-S15-AZ but may differ in packaging or specific testing criteria. The -AZ suffix typically denotes specific ordering or compliance attributes defined by the manufacturer.
Direct substitutes include other 600V, 2A N-channel MOSFETs in TO-252 packages. Verify RDS(ON) and gate charge specifications match application requirements. Cross-reference with NEC/Retired product lines if sourcing legacy equivalents.