SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 2SK3113-Z-E1-AZ is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-to-source voltage rating of 600V and is designed for switching applications in industrial and consumer use cases. The component is supplied in an MP-3Z package with three leads, utilizing embossed tape carrier packaging.
Verify the specific suffix (E1 vs E2) against official Renesas documentation to ensure correct pinout and packaging compatibility. Confirm lead compliance status as sources indicate non-compliance. Request the official datasheet for absolute maximum ratings and thermal characteristics before integration.
Select this component for high-voltage switching requirements where 600V blocking capability is necessary. Ensure the MP-3Z package fits the PCB layout constraints. Verify that the application current and thermal dissipation requirements align with the device's specifications found in the official datasheet.
This part belongs to the 2SK3113 series of N-channel power MOSFETs from Renesas. Variants such as 2SK3113-Z-E2-AZ and 2SK3113B exist, sharing similar core electrical characteristics but potentially differing in packaging or compliance details. The series targets general-purpose power switching.
Cross-reference with other 600V N-channel MOSFETs in the TO-220 or equivalent package if availability is an issue. Ensure replacement parts match the 600V VDS rating and thermal performance. Consult Renesas for direct equivalents.