2SK3116B-S19-AY

$1.92

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:1524a9ccbf4f Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK3116B-S19-AY

Overview

The 2SK3116B-S19-AY is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a TO-220AB (MP-25) package and supports industrial qualification levels. Key electrical parameters include a drain-source voltage (VDSS) of 600 V, a continuous drain current (ID) of 7.5 A, and a maximum on-resistance (RDS(on)) of 1200 mΩ at 10 V gate drive. The device contains a single channel with three leads and is available in bulk tube packaging.

Feature Summary

N-channel power MOSFET configuration for switching applications
Industrial qualification level for robust performance
TO-220AB surface-mount compatible package design

Applications

Industrial equipment power management
Consumer use electronic circuits
General purpose switching applications

Procurement Notes

Verify the latest product information directly with a Renesas Electronics sales office before purchasing or using this component. Confirm that the specific ordering suffix matches the required package and lead compliance specifications. Ensure the industrial qualification level aligns with your system requirements. Check for any updates to the datasheet regarding thermal performance or pinout configurations.

Selection Notes

Select this component when a 600 V rating and 7.5 A current capacity are required in a TO-220AB package. Consider the 1200 mΩ RDS(on) value for efficiency calculations at 10 V gate drive. Verify compatibility with industrial environmental standards. Evaluate thermal dissipation needs given the package type and current handling capabilities.

Part Context

This part belongs to the Renesas discrete semiconductor product category, specifically single FETs. It is related to the broader 2SK3116B series, which includes variants like the 2SK3116B-ZK. Renesas Electronics Corporation acquired business from companies that previously produced similar devices, integrating them into their current portfolio.

Replacement Considerations

Publicly confirmed substitute part numbers are not explicitly listed in the provided documentation. Users should consult Renesas technical support for direct replacements or cross-reference based on matching electrical parameters such as VDSS, ID, and package type.