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The 2SK3225-Z-AZ is an N-Channel Power MOSFET manufactured by Renesas Electronics Corporation, housed in a TO-251AA (MP-3) package. It features a drain-source breakdown voltage of 60V and a continuous drain current rating of 34A. The device exhibits a maximum on-state resistance of 27mΩ at VGS=4.0V and 18mΩ at VGS=10V. Key electrical characteristics include a typical input capacitance of 2100pF and a built-in gate protection diode.
Verify the specific suffix -AZ against official Renesas documentation to confirm exact packaging and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements if applicable to your system design. Cross-reference the manufacturer part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component for applications requiring high current handling up to 34A with a 60V voltage rating. Consider the TO-251AA package for surface-mount assembly constraints. Evaluate the thermal performance based on the specified RDS(on) values to ensure adequate heat dissipation without external cooling solutions.
This component belongs to the 2SK3225 series of N-Channel DMOS FETs from Renesas. The series is engineered for high-voltage and high-current switching tasks. The -AZ suffix typically denotes specific packaging or environmental compliance variations within the standard 2SK3225 product line.
Consult official Renesas substitution guides for verified equivalents. Generic replacements must match the 60V/34A rating and TO-251AA footprint while ensuring compatible RDS(on) and gate charge specifications.