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Product Detailed Parameters
- Description：MOSFET N-CH 100V 15A U-DL
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：100mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：960 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta), 20W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DL
- Package / Case：TO-252-4, DPAK (3 Leads + Tab)
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Overview
The Panasonic 2SK3268 is a silicon N-channel power MOS FET in a U-DL package. It features a drain-source voltage of 100 V and a continuous drain current of ±15 A, with a peak drain current of ±60 A. The device guarantees an avalanche energy capability of 22.5 mJ and exhibits low ON resistance (RDS(on)) of up to 100 mΩ at VGS = 10 V and ID = 12 A. Key electrical parameters include a gate threshold voltage of 2.0 to 4.0 V, forward transfer admittance of 6 to 11 S, and thermal resistance from channel to case of 6.25 °C/W.
Feature Summary
- Guaranteed avalanche energy capability for robust operation under transient conditions
- High-speed switching performance with defined turn-on and turn-off times
- Low ON resistance Ron to minimize conduction losses
- No secondary breakdown characteristic ensuring stable high-current handling
Applications
- Non-contact relay
- Solenoid drive
- Motor drive
- Control equipment
- Switching mode regulator
Procurement Notes
Verify the specific lifecycle status before procurement, as this component is categorized under Maintenance/Discontinued. Confirm that the U-DL package dimensions and pinout align with existing board layouts. Ensure design margins respect the absolute maximum ratings, particularly regarding peak drain current and thermal limits during operation.
Selection Notes
Select this component for applications requiring a 100 V N-channel MOSFET with moderate current handling capabilities. The guaranteed avalanche energy rating makes it suitable for inductive load driving where transient spikes are expected. Evaluate the thermal resistance specifications against the system's cooling requirements to ensure junction temperatures remain within safe operating limits.
Part Context
This part belongs to the Panasonic Power MOS FETs series, designed for general electronic equipment and standard applications. It utilizes a silicon N-channel structure optimized for low-voltage drive and high electrostatic energy capability. The component complies with the RoHS Directive and is intended for use in circuits such as regulators and motor drives.
Replacement Considerations
Consult official Panasonic documentation for confirmed substitute part numbers. Verify compatibility regarding package type, pin configuration, and electrical characteristics when considering alternatives.
